Transistors Bipolar (BJT) SOT-23 PNP GEN PUR
MMBTA56: Transistors Bipolar (BJT) SOT-23 PNP GEN PUR
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Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 80 V |
Emitter- Base Voltage VEBO : | - 4 V | Maximum DC Collector Current : | 0.5 A |
DC Collector/Base Gain hfe Min : | 100 | Configuration : | Single |
Maximum Operating Frequency : | 50 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | SMD/SMT | Package / Case : | SOT-23 |
Packaging : | Reel |
Symbol | Parameter | Value | Units |
VCES | Collector-Emitter Voltage | 80 | V |
VCBO | Collector-Base Voltage | 80 | V |
VEBO | Emitter-Base Voltage | 4.0 | V |
IC | Collector Current - Continuous | 500 | mA |
TJ, Tstg | Operating and Storage Junction Temperature Range | -55 to +150 |
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Part Number | MMBTA56 |
Product Type | PNP |
VCEO (V) | -80 |
IC (A) | -0.5 |
ICM (A) | - |
PD (W) | 0.3 |
hFE Min | 100 |
hFE Max | - |
@ IC (A) | -0.1 |
VCE (SAT) Max (mV) | -250 |
@ IC (A) | -0.1 |
@ IB (mA) | -10 |
fT Min (MHz) | 50 |
RCE (SAT) (m) | - |
Technical/Catalog Information | MMBTA56 |
Vendor | Fairchild Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Transistor Type | PNP |
Voltage - Collector Emitter Breakdown (Max) | 80V |
Current - Collector (Ic) (Max) | 500mA |
Power - Max | 350mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 1V |
Vce Saturation (Max) @ Ib, Ic | 200mV @ 10mA, 100mA |
Frequency - Transition | 50MHz |
Current - Collector Cutoff (Max) | 100nA |
Mounting Type | Surface Mount |
Package / Case | SOT-23 |
Packaging | Digi-Reel? |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | MMBTA56 MMBTA56 MMBTA56FSDKR ND MMBTA56FSDKRND MMBTA56FSDKR |