MMBTA55

DC Collector/Base Gain hfe Min : 100
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : PNP
Collector- Emitter Voltage VCEO Max : 60 V
Package / Case : SOT-23
Emitter- Base Voltage VEBO : 4 V
Maximum DC Collector Current : 0.5 A
Maximum Operating Frequency : 50 MHz


Specifications

Symbol	Parameter	Value	Units
VCES	Collector-Emitter Voltage	60	V
VCBO	Collector-Base Voltage	60	V
VEBO	Emitter-Base Voltage	4.0	V
IC	Collector Current - Continuous	500	mA
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +150


*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle perations.




Parameters:

Technical/Catalog Information	MMBTA55
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	60V
Current - Collector (Ic) (Max)	500mA
Power - Max	350mW
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 10mA, 1V
Vce Saturation (Max) @ Ib, Ic	250mV @ 10mA, 100mA
Frequency - Transition	50MHz
Current - Collector Cutoff (Max)	100nA
Mounting Type	Surface Mount
Package / Case	SOT-23
Packaging	Tape & Reel (TR)
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MMBTA55 MMBTA55 MMBTA55FS ND MMBTA55FSND MMBTA55FS