Transistors Bipolar (BJT) 100V 300mW
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Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 60 V |
Emitter- Base Voltage VEBO : | - 4 V | Maximum DC Collector Current : | 0.5 A |
DC Collector/Base Gain hfe Min : | 100 | Configuration : | Single |
Maximum Operating Frequency : | 50 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | SMD/SMT | Package / Case : | SOT-23 |
Packaging : | Reel |
· Epitaxial Planar Die Construction
· Complementary NPN Types Available (MMBTA05 / MMBTA06)
· Ideal for Medium Power Amplification and Switching
Characteristic |
Symbol |
MMBTA55 |
MMBTA56 |
Unit |
Collector-Base Voltage |
VCBO |
-60 |
-80 |
V |
Collector-Emitter Voltage |
VCEO |
-60 |
-80 |
V |
Emitter-Base Voltage |
VEBO |
-4.0 |
V | |
Collector Current - Continuous (Note 1) |
IC |
-500 |
mA | |
Power Dissipation (Note 1) |
Pd |
300 |
mW | |
Thermal Resistance, Junction to Ambient (Note 1) |
RJA |
417 |
/W | |
Operating and Storage and Temperature Range |
Tj, TSTG |
-55 to +150 |
Technical/Catalog Information | MMBTA55-7 |
Vendor | Diodes Inc (VA) |
Category | Discrete Semiconductor Products |
Transistor Type | PNP |
Voltage - Collector Emitter Breakdown (Max) | 60V |
Current - Collector (Ic) (Max) | 500mA |
Power - Max | 300mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 1V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
Frequency - Transition | 50MHz |
Current - Collector Cutoff (Max) | 100nA |
Mounting Type | Surface Mount |
Package / Case | SOT-23-3, TO-236-3, Micro3?, SSD3, SST3 |
Packaging | Cut Tape (CT) |
Drawing Number | * |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | MMBTA55 7 MMBTA557 MMBTA55DICT ND MMBTA55DICTND MMBTA55DICT |