MMBT918LT1G

Transistors Bipolar (BJT) 50mA 15V NPN

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SeekIC No. : 00204107 Detail

MMBT918LT1G: Transistors Bipolar (BJT) 50mA 15V NPN

floor Price/Ceiling Price

US $ .05~.18 / Piece | Get Latest Price
Part Number:
MMBT918LT1G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.18
  • $.13
  • $.06
  • $.05
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 15 V
Emitter- Base Voltage VEBO : 3 V Maximum DC Collector Current : 0.05 A
DC Collector/Base Gain hfe Min : 20 at 3 mA at 1 V Configuration : Single
Maximum Operating Frequency : 600 MHz (Min) Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : SOT-23
Packaging : Reel    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : SOT-23
Emitter- Base Voltage VEBO : 3 V
Maximum DC Collector Current : 0.05 A
Collector- Emitter Voltage VCEO Max : 15 V
DC Collector/Base Gain hfe Min : 20 at 3 mA at 1 V
Maximum Operating Frequency : 600 MHz (Min)


Parameters:

Technical/Catalog InformationMMBT918LT1G
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Frequency - Transition600MHz
Noise Figure (dB Typ @ f)6dB @ 60MHz
Current - Collector (Ic) (Max)50mA
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 3mA, 1V
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)15V
Gain11dB
Power - Max300mW
Compression Point (P1dB)-
Package / CaseSOT-23-3, TO-236-3, Micro3?, SSD3, SST3
PackagingDigi-Reel?
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MMBT918LT1G
MMBT918LT1G
MMBT918LT1GOSDKR ND
MMBT918LT1GOSDKRND
MMBT918LT1GOSDKR



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