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MMBT918

Transistors RF Bipolar Small Signal NPN RF Transistor

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SeekIC No. : 00218441 Detail

MMBT918: Transistors RF Bipolar Small Signal NPN RF Transistor

MMBT918 Data Sheet

floor Price/Ceiling Price

US $ .06~.17 / Piece | Get Latest Price
Part Number:
MMBT918
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.17
  • $.12
  • $.08
  • $.06
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Quick Details

Configuration : Single Transistor Polarity : NPN
Maximum Operating Frequency : 600 MHz Collector- Emitter Voltage VCEO Max : 15 V
Emitter- Base Voltage VEBO : 3 V Continuous Collector Current : 0.05 A
Power Dissipation : 225 mW Maximum Operating Temperature : + 150 C
Package / Case : SOT-23 Packaging : Reel    

Description

Configuration : Single
Transistor Polarity : NPN
Maximum Operating Temperature : + 150 C
Packaging : Reel
Collector- Emitter Voltage VCEO Max : 15 V
Package / Case : SOT-23
Power Dissipation : 225 mW
Continuous Collector Current : 0.05 A
Emitter- Base Voltage VEBO : 3 V
Maximum Operating Frequency : 600 MHz


Pinout






Specifications

Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
15
V
VCBO
Collector-Base Voltage
30
V
VEBO
Emitter-Base Voltage
3.0
V
IC
Collector Current - Continuous
50
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.




Parameters:

Technical/Catalog InformationMMBT918
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Frequency - Transition600MHz
Noise Figure (dB Typ @ f)6dB @ 60MHz
Current - Collector (Ic) (Max)50mA
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 3mA, 1V
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)15V
Gain15dB
Power - Max225mW
Compression Point (P1dB)-
Package / CaseSOT-23
PackagingTape & Reel (TR)
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MMBT918
MMBT918



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