MMBT7002K

The MMBT7002K is a kind of N-channel enhancement mode field effect transistor. The characteristics of MMBT7002K can be summarized as (1)drain source breakdown voltage at I D = 10 A BV DSS: 60V; (2)zero gate voltage drain current at V DS = 60 V I DSS: 1 A; (3)gate source leakage current at V GS = ± 20 V I GSS: ± 10 A; (4)gate threshold voltage at V DS = 10 V, I D = 250 A V GS(th): 1 to 2.5 V; (5)static drain source on-resistance at V GS = 10 V, I D = 500 mA/ at V GS = 4.5 V, I D = 200 mA R DS(ON): 3/4; (6)forward transconductance at V DS = 10 V, I D = 200 mA g fs : 80mS; (7)input capacitance at V DS = 25 V, f = 1 MHz C iss: 50 pF; (8)output capacitance at V DS = 25 V, f = 1 MHz C oss: 25 pF; (9)reverse transfer capacitance at V DS = 25 V, f = 1 MHz C rss: 5 pF.

The features of MMBT7002K can be summarized as (1)low on resistance RDS(ON); (2)low gate threshold voltage; (3)low input capacitance; (4)ESD protected up to 2KV:

The absolute maximum ratings of MMBT7002K are (1)drain-source voltage V DSS: 60 V; (2)gate-source voltage V GSS: ± 20 V; (3)drain current (continuous) I D: 300 mA; (4)drain current (pulse width 10 s) I DM : 800 mA; (5)total power dissipation P tot: 350 mW; (6)operating and storage temperature range T j , T stg: - 55 to + 150°C