MMBT7002

The MMBT7002 is a kind of N-channel enhancement mode field effect transistor. If you want to know more about this device, please go to our website.

The features of MMBT7002 can be summarized as (1)high density cell design for low R DS(ON); (2)voltage controlled small signal switching; (3)high saturation current capability; (4)high speed switching.

The absolute maximum ratings of MMBT7002 are (1)drain-source voltage VDSS: 60 V; (2)drain-gate voltage (R GS 1M) VDGR: 60 V; (3)gate-source voltage -continuous/ -non repetitive (tp < 50 s) VGSS: ± 20/ ± 40 V; (4)maximum drain current -continuous/ -pulsed ID: 115/ 800 mA; (5)total power dissipation Ptot: 200 mW; (6)operating and storage temperature range TJ , T s: - 55 to + 150°C.