Features: PNP SiliconHigh Voltage TransistorSpecifications Parameter Symbol Rating Unit Collector-base voltage VCBO -350 V Collector-emitter voltage VCEO -350 V Emitter-base voltage VEBO -5 V Base current IB -250 Collector current ...
MMBT6520: Features: PNP SiliconHigh Voltage TransistorSpecifications Parameter Symbol Rating Unit Collector-base voltage VCBO -350 V Collector-emitter voltage VCEO -350 ...
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Parameter |
Symbol |
Rating |
Unit |
Collector-base voltage |
VCBO |
-350 |
V |
Collector-emitter voltage |
VCEO |
-350 |
V |
Emitter-base voltage |
VEBO |
-5 |
V |
Base current |
IB |
-250 |
|
Collector current |
IC |
-500 |
mA |
Total device dissipation FR-5 board *1 @TA = 25 Derate above 25 |
PD |
225 1.8 |
mW mW/ |
Thermal resistance, junction-to-ambient |
RJA |
556 |
/W |
Total device dissipation alumina substrate *2 @TA = 25 derate above 25 |
PD |
300 2.4 |
mW mW/ |
Thermal resistance, junction-to-ambient |
RJA |
417 |
/W |
Junction and storage temperature |
TJ,Tstg |
-55 to +150 |