Transistors Bipolar (BJT) 500mA 350V NPN
MMBT6517LT3G: Transistors Bipolar (BJT) 500mA 350V NPN
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 350 V |
Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 0.1 A |
DC Collector/Base Gain hfe Min : | 20 at 0.1 mA at 10 V | Configuration : | Single |
Maximum Operating Frequency : | 200 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | SMD/SMT | Package / Case : | SOT-23 |
Packaging : | Reel |
Technical/Catalog Information | MMBT6517LT3G |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 350V |
Current - Collector (Ic) (Max) | 500mA |
Power - Max | 225mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 30mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
Frequency - Transition | 200MHz |
Current - Collector Cutoff (Max) | - |
Mounting Type | Surface Mount |
Package / Case | SOT-23-3, TO-236-3, Micro3?, SSD3, SST3 |
Packaging | Tape & Reel (TR) |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | MMBT6517LT3G MMBT6517LT3G |