MMBT6517LT1G, US $ .12-.32 , ON Semiconductor, MMBT6517LT1G DataSheet download, circuit diagram from SeekIC.com

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MMBT6517LT1G: Transistors Bipolar (BJT) 500mA 350V NPN

MMBT6517LT1G Data Sheet

US $ .12~.32 / Piece | Get Latest Price

Part Number:: MMBT6517LT1G
Mfg:: ON Semiconductor
Supply Ability:: 5000

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity :	NPN	Collector- Emitter Voltage VCEO Max :	350 V
Emitter- Base Voltage VEBO :	5 V	Maximum DC Collector Current :	0.1 A
DC Collector/Base Gain hfe Min :	20 at 0.1 mA at 10 V	Configuration :	Single
Maximum Operating Frequency :	200 MHz	Maximum Operating Temperature :	+ 150 C
Mounting Style :	SMD/SMT	Package / Case :	SOT-23
Packaging :	Reel

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Emitter- Base Voltage VEBO : 5 V
Maximum Operating Frequency : 200 MHz
Maximum DC Collector Current : 0.1 A
Package / Case : SOT-23
Collector- Emitter Voltage VCEO Max : 350 V
DC Collector/Base Gain hfe Min : 20 at 0.1 mA at 10 V

Parameters:

Technical/Catalog Information	MMBT6517LT1G
Vendor	ON Semiconductor (VA)
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	350V
Current - Collector (Ic) (Max)	100mA
Power - Max	225mW
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 30mA, 10V
Vce Saturation (Max) @ Ib, Ic	300mV @ 1mA, 10mA
Frequency - Transition	200MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Surface Mount
Package / Case	SOT-23-3, TO-236-3, Micro3?, SSD3, SST3
Packaging	Digi-Reel?
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MMBT6517LT1G MMBT6517LT1G MMBT6517LT1GOSDKR ND MMBT6517LT1GOSDKRND MMBT6517LT1GOSDKR

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MMBT6517LT1G

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