MMBT6517LT1

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Emitter- Base Voltage VEBO : 5 V
Maximum Operating Frequency : 200 MHz
Maximum DC Collector Current : 0.1 A
Package / Case : SOT-23
Collector- Emitter Voltage VCEO Max : 350 V
DC Collector/Base Gain hfe Min : 20 at 0.1 mA at 10 V


Specifications

Rating Symbol Value Unit

CollectorEmitter Voltage V CEO 350 Vdc

CollectorBase Voltage V CBO 350 Vdc

EmitterBase Voltage V EBO 5.0 Vdc

Base Current I B 250 m Adc

Collector Current - Continuous I C 500 m Adc

Parameters:

Technical/Catalog Information	MMBT6517LT1
Vendor	ON Semiconductor (VA)
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	350V
Current - Collector (Ic) (Max)	100mA
Power - Max	225mW
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 30mA, 10V
Vce Saturation (Max) @ Ib, Ic	300mV @ 1mA, 10mA
Frequency - Transition	200MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Surface Mount
Package / Case	SOT-23-3, TO-236-3, Micro3?, SSD3, SST3
Packaging	Cut Tape (CT)
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	MMBT6517LT1 MMBT6517LT1 MMBT6517LT1OSCT ND MMBT6517LT1OSCTND MMBT6517LT1OSCT