MMBT6515

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : SOT-23
Emitter- Base Voltage VEBO : 4 V
Maximum DC Collector Current : 0.2 A
Collector- Emitter Voltage VCEO Max : 25 V
DC Collector/Base Gain hfe Min : 250


Features:

• This device is designed as a general purpose amplifier and switch.
• The useful dynamic range extends to 100mA as a switch and to 100MHz as an amplifier.


Specifications

Symbol	Parameter	Value	Units
VCEO	Collector-Emitter Voltage	25	V
VCBO	Collector-Base Voltage	40	V
VEBO	Emitter-Base Voltage	4.0	V
IC	Collector current - Continuous	200	mA
TJ, Tstg	Junction and Storage Temperature	-55 ~ +150

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle  perations


Parameters:

Technical/Catalog Information	MMBT6515
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	25V
Current - Collector (Ic) (Max)	200mA
Power - Max	350mW
DC Current Gain (hFE) (Min) @ Ic, Vce	250 @ 2mA, 10V
Vce Saturation (Max) @ Ib, Ic	500mV @ 5mA, 50mA
Frequency - Transition	-
Current - Collector Cutoff (Max)	-
Mounting Type	Surface Mount
Package / Case	SOT-23
Packaging	Tape & Reel (TR)
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MMBT6515 MMBT6515