Transistors Bipolar (BJT) 200mA 55V NPN
MMBT6429LT1G: Transistors Bipolar (BJT) 200mA 55V NPN
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 45 V |
Emitter- Base Voltage VEBO : | 6 V | Maximum DC Collector Current : | 0.2 A |
DC Collector/Base Gain hfe Min : | 500 at 0.01 mA at 5 V | Configuration : | Single |
Maximum Operating Frequency : | 700 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | SMD/SMT | Package / Case : | SOT-23 |
Packaging : | Reel |
Technical/Catalog Information | MMBT6429LT1G |
Vendor | ON Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 45V |
Current - Collector (Ic) (Max) | 200mA |
Power - Max | 225mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 500 @ 10A, 5V |
Vce Saturation (Max) @ Ib, Ic | 200mV @ 500A, 10mA |
Frequency - Transition | 700MHz |
Current - Collector Cutoff (Max) | 100nA |
Mounting Type | Surface Mount |
Package / Case | SOT-23-3, TO-236-3, Micro3?, SSD3, SST3 |
Packaging | Digi-Reel? |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | MMBT6429LT1G MMBT6429LT1G MMBT6429LT1GOSDKR ND MMBT6429LT1GOSDKRND MMBT6429LT1GOSDKR |