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SeekIC No. : 003436313 Detail

MMBT6427LT3G: TRANS DARL NPN 40V 500MA SOT-23

MMBT6427LT3G Data Sheet

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Part Number:: MMBT6427LT3G
Mfg:
Supply Ability:: 5000

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Negotiable

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Upload time: 2024/12/21

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Product Details

Quick Details

Series:	-	Manufacturer:	ON Semiconductor
Transistor Type:	NPN - Darlington	Current - Collector (Ic) (Max):	500mA
Package / Case :	SOT-6	Voltage - Collector Emitter Breakdown (Max):	40V
Resistor - Base (R1) (Ohms):	-	Vce Saturation (Max) @ Ib, Ic:	1.5V @ 500µA, 500mA
Current - Collector Cutoff (Max):	1µA	Resistor - Emitter Base (R2) (Ohms):	-
DC Current Gain (hFE) (Min) @ Ic, Vce:	20000 @ 100mA, 5V	Power - Max:	225mW
Frequency - Transition:	-	Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3	Supplier Device Package:	SOT-23-3 (TO-236)

Description

Series: -
Resistor - Base (R1) (Ohms): -
Resistor - Emitter Base (R2) (Ohms): -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)Alternate Packaging
Voltage - Collector Emitter Breakdown (Max): 40V
Current - Collector (Ic) (Max): 500mA
Frequency - Transition: -
Power - Max: 225mW
Transistor Type: NPN - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA
Current - Collector Cutoff (Max): 1µA
Manufacturer: ON Semiconductor
Supplier Device Package: SOT-23-3 (TO-236)

Parameters:

Technical/Catalog Information	MMBT6427LT3G
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)	40V
Current - Collector (Ic) (Max)	500mA
Power - Max	225mW
DC Current Gain (hFE) (Min) @ Ic, Vce	10000 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	1.2V @ 500A, 50mA
Frequency - Transition	-
Current - Collector Cutoff (Max)	1A
Mounting Type	Surface Mount
Package / Case	SOT-23-3, TO-236-3, Micro3?, SSD3, SST3
Packaging	Tape & Reel (TR)
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MMBT6427LT3G MMBT6427LT3G

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MMBT6427LT3G

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