MMBT6427

Power Dissipation :
Transistor Polarity : NPN
Mounting Style : SMD/SMT
Packaging : Reel
Configuration : Single
Maximum Operating Temperature : + 150 C
Collector- Base Voltage VCBO : 40 V
Package / Case : SOT-23
Maximum DC Collector Current : 1.2 A
Emitter- Base Voltage VEBO : 12 V
Maximum Collector Cut-off Current : 0.05 uA
Collector- Emitter Voltage VCEO Max : 40 V


Features:

· Epitaxial Planar Die Construction
· Ideal for Low Power Amplification and Switching
· High Current Gain
· Lead Free/RoHS Compliant (Note 1)




Specifications

Characteristic	Symbol	Value	Unit
Collector-Base Voltage	VCBO	40	V
Collector-Emitter Voltage	VCEO	40	V
Emitter-Base Voltage	VEBO	12	V
Collector Current - Continuous	IC	500	mA

Parameters:

Technical/Catalog Information	MMBT6427
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Transistor Type	NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)	40V
Current - Collector (Ic) (Max)	1.2A
Power - Max	350mW
DC Current Gain (hFE) (Min) @ Ic, Vce	10000 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	1.2V @ 500A, 50mA
Frequency - Transition	-
Current - Collector Cutoff (Max)	1A
Mounting Type	Surface Mount
Package / Case	SOT-23
Packaging	Cut Tape (CT)
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MMBT6427 MMBT6427 MMBT6427FSCT ND MMBT6427FSCTND MMBT6427FSCT