Transistors Bipolar (BJT) NPN Transistor General Purpose
MMBT5962: Transistors Bipolar (BJT) NPN Transistor General Purpose
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 45 V | ||
Emitter- Base Voltage VEBO : | 8 V | Maximum DC Collector Current : | 0.1 A | ||
DC Collector/Base Gain hfe Min : | 600 | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-23 | Packaging : | Reel |
Symbol | Parameter |
Value |
Units |
VCEO VCBO VEBO IC TJ, Tstg |
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range |
45 45 8.0 100 -55 to +150 |
V V V mA °C |
Technical/Catalog Information | MMBT5962 |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 45V |
Current - Collector (Ic) (Max) | 100mA |
Power - Max | 350mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 600 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 200mV @ 500A, 10mA |
Frequency - Transition | - |
Current - Collector Cutoff (Max) | - |
Mounting Type | Surface Mount |
Package / Case | SOT-23 |
Packaging | Tape & Reel (TR) |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | MMBT5962 MMBT5962 |