Transistors Bipolar (BJT) SS NPN 300mW
MMBT5551-7: Transistors Bipolar (BJT) SS NPN 300mW
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 160 V |
Emitter- Base Voltage VEBO : | 6 V | Maximum DC Collector Current : | 0.2 A |
DC Collector/Base Gain hfe Min : | 80 | Configuration : | Single |
Maximum Operating Frequency : | 300 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | SMD/SMT | Package / Case : | SOT-23 |
Packaging : | Reel |
Technical/Catalog Information | MMBT5551-7 |
Vendor | Diodes Inc (VA) |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 160V |
Current - Collector (Ic) (Max) | 200mA |
Power - Max | 300mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 1mA, 10mA |
Frequency - Transition | 300MHz |
Current - Collector Cutoff (Max) | - |
Mounting Type | Surface Mount |
Package / Case | SOT-23-3, TO-236-3, Micro3?, SSD3, SST3 |
Packaging | Cut Tape (CT) |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | MMBT5551 7 MMBT55517 MMBT5551 7DICT ND MMBT55517DICTND MMBT5551-7DICT |