MMBT5550LT1

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Emitter- Base Voltage VEBO : 6 V
Package / Case : SOT-23
Collector- Emitter Voltage VCEO Max : 140 V
DC Collector/Base Gain hfe Min : 60 at 1 mA at 5 V
Maximum DC Collector Current : 0.06 A


Features:

• Pb−Free Packages are Available


Specifications

Rating	Symbol	5550	Unit
Collector−Emitter Voltage	VCEO	140	Vdc
Collector−Base Voltage	VCBO	160	Vdc
Emitter−Base Voltage	VEBO	6.0	Vdc
Collector Current − Continuous	IC	600	mAdc

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.


Parameters:

Technical/Catalog Information	MMBT5550LT1
Vendor	ON Semiconductor (VA)
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	140V
Current - Collector (Ic) (Max)	600mA
Power - Max	225mW
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	250mV @ 5mA, 50mA
Frequency - Transition	-
Current - Collector Cutoff (Max)	-
Mounting Type	Surface Mount
Package / Case	SOT-23-3, TO-236-3, Micro3?, SSD3, SST3
Packaging	Cut Tape (CT)
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	MMBT5550LT1 MMBT5550LT1 MMBT5550LT1OSCT ND MMBT5550LT1OSCTND MMBT5550LT1OSCT