Transistors Bipolar (BJT) PNP Transistor General Purpose
MMBT5401: Transistors Bipolar (BJT) PNP Transistor General Purpose
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Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 150 V |
Emitter- Base Voltage VEBO : | - 5 V | Maximum DC Collector Current : | 0.6 A |
DC Collector/Base Gain hfe Min : | 60 | Configuration : | Single |
Maximum Operating Frequency : | 300 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | SMD/SMT | Package / Case : | SOT-23 |
Packaging : | Reel |
Characteristic | Symbol | MMBT5401 | Unit |
Collector-Base Voltage | VCBO | -160 | V |
Collector-Emitter Voltage | VCEO | -150 | V |
Emitter-Base Voltage | VEBO | -5.0 | V |
Collector Current - Continuous (Note 1) | IC | -200 | mA |
Power Dissipation (Note 1) | Pd | 300 | mW |
Thermal Resistance, Junction to Ambient (Note 1) | RJA | 417 | /W |
Operating and Storage and Temperature Range | Tj, TSTG | -55 to +150 |
Part Number | MMBT5401 |
Product Type | PNP |
VCEO (V) | -150 |
IC (A) | -0.6 |
ICM (A) | - |
PD (W) | 0.3 |
hFE Min | 60 |
hFE Max | 240 |
@ IC (A) | -0.01 |
VCE (SAT) Max (mV) | -200 |
@ IC (A) | -0.01 |
@ IB (mA) | -1 |
fT Min (MHz) | 100 |
RCE (SAT) (m) | - |
Technical/Catalog Information | MMBT5401 |
Vendor | Fairchild Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Transistor Type | PNP |
Voltage - Collector Emitter Breakdown (Max) | 150V |
Current - Collector (Ic) (Max) | 600mA |
Power - Max | 350mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 200mV @ 1mA, 10mA |
Frequency - Transition | 300MHz |
Current - Collector Cutoff (Max) | - |
Mounting Type | Surface Mount |
Package / Case | SOT-23 |
Packaging | Digi-Reel? |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | MMBT5401 MMBT5401 MMBT5401FSDKR ND MMBT5401FSDKRND MMBT5401FSDKR |