MMBT5210

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Collector- Emitter Voltage VCEO Max : 50 V
Maximum DC Collector Current : 0.1 A
Package / Case : SOT-23
Maximum Operating Frequency : 30 MHz
DC Collector/Base Gain hfe Min : 200
Emitter- Base Voltage VEBO : 4.5 V


Specifications

Symbol	Parameter	Value	Units
VCEO	Collector-Emitter Voltage	50	V
VCBO	Collector-Base Voltage	50	V
VEBO	Emitter-Base Voltage	4.5	V
IC	Collector Current - Continuous	100	mA
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +150	°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.


Parameters:

Technical/Catalog Information	MMBT5210
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	50V
Current - Collector (Ic) (Max)	100mA
Power - Max	350mW
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 100A, 5V
Vce Saturation (Max) @ Ib, Ic	700mV @ 1mA, 10mA
Frequency - Transition	30MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Surface Mount
Package / Case	SOT-23
Packaging	Tape & Reel (TR)
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MMBT5210 MMBT5210