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MMBT5179

Transistors RF Bipolar Small Signal NPN RF Transistor

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SeekIC No. : 00218413 Detail

MMBT5179: Transistors RF Bipolar Small Signal NPN RF Transistor

MMBT5179 Data Sheet

floor Price/Ceiling Price

US $ .03~.05 / Piece | Get Latest Price
Part Number:
MMBT5179
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.05
  • $.05
  • $.04
  • $.03
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Quick Details

Configuration : Single Transistor Polarity : NPN
Maximum Operating Frequency : 2000 MHz Collector- Emitter Voltage VCEO Max : 12 V
Emitter- Base Voltage VEBO : 2.5 V Continuous Collector Current : 0.05 A
Power Dissipation : 225 mW Maximum Operating Temperature : + 150 C
Package / Case : SOT-23 Packaging : Reel    

Description

Configuration : Single
Transistor Polarity : NPN
Emitter- Base Voltage VEBO : 2.5 V
Maximum Operating Temperature : + 150 C
Packaging : Reel
Package / Case : SOT-23
Power Dissipation : 225 mW
Collector- Emitter Voltage VCEO Max : 12 V
Continuous Collector Current : 0.05 A
Maximum Operating Frequency : 2000 MHz


Specifications

Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
12
V
VCBO
Collector-Base Voltage
20
V
VEBO
Emitter-Base Voltage
2.5
V
IC
Collector Current - Continuous
50
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.



Parameters:

Technical/Catalog InformationMMBT5179
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Frequency - Transition2GHz
Noise Figure (dB Typ @ f)5dB @ 200MHz
Current - Collector (Ic) (Max)50mA
DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 3mA, 1V
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)12V
Gain15dB
Power - Max225mW
Compression Point (P1dB)-
Package / CaseSOT-23
PackagingCut Tape (CT)
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MMBT5179
MMBT5179
MMBT5179CT ND
MMBT5179CTND
MMBT5179CT



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