MMBT4403LT1G

Transistors Bipolar (BJT) 600mA 40V PNP

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SeekIC No. : 00205723 Detail

MMBT4403LT1G: Transistors Bipolar (BJT) 600mA 40V PNP

floor Price/Ceiling Price

US $ .02~.08 / Piece | Get Latest Price
Part Number:
MMBT4403LT1G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.08
  • $.07
  • $.05
  • $.02
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 40 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 0.6 A
DC Collector/Base Gain hfe Min : 30 at 0.1 mA at 1 V Configuration : Single
Maximum Operating Frequency : 200 MHz (Min) Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : SOT-23
Packaging : Reel    

Description

Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : 5 V
Package / Case : SOT-23
Collector- Emitter Voltage VCEO Max : 40 V
Maximum DC Collector Current : 0.6 A
Maximum Operating Frequency : 200 MHz (Min)
DC Collector/Base Gain hfe Min : 30 at 0.1 mA at 1 V


Description

Features of the MMBT4403LT1G is pb-free package is available.

The absolute maximum ratings of the MMBT4403LT1G can be summarized as:(1):the rating is collector-emitter voltage,the symbol is VCEO,the value is -40,the unit is Vdc;(2):the rating is collector-base voltage,the symbol is VCBO,the value is -40,the unit is Vdc;(3):the rating is emitter-base voltage,the symbol is VEBO,the value is -5.0,the unit is Vdc;(4):the rating is collectorcurrent-continuous,the symbol is IC,the value is -600,the unit is mAdc.

The thermal characteristics of the MMBT4403LT1G can be summarized as:(1):the characteristic is total device dissipation FR-5 board TA=25,the symbol is PD,the value is 225,the unit is mW;(2):the characteristic is total device dissipation FR-5 board derate above 25,the symbol is PD,the value is 1.8,the unit is mW/;(3):the characteristic is thermal resistance,junction-to-ambient,the symbol is RJA,the value is 556,the unit is /W;(4):the characteristic is total device dissipation alumina substrate TA=25,the symbol is PD,the value is 300,the unit is mW;(5):the characteristic is total device dissipation alumina substrate derate above 25,the symbol is PD,the value is 2.4,the unit is mW/;(6):the characteristic is thermal resistance,junction-to-ambient,the symbol is RJA,the value is 417,the unit is /W;(7):the characteristic is junction and storage temperature,the symbol is TJ,TSTG,the value is -55 to +150,the unit is .




Parameters:

Technical/Catalog InformationMMBT4403LT1G
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)40V
Current - Collector (Ic) (Max)600mA
Power - Max225mW
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 2V
Vce Saturation (Max) @ Ib, Ic400mV @ 15mA, 150mA
Frequency - Transition200MHz
Current - Collector Cutoff (Max)-
Mounting TypeSurface Mount
Package / CaseSOT-23-3, TO-236-3, Micro3?, SSD3, SST3
PackagingDigi-Reel?
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MMBT4403LT1G
MMBT4403LT1G
MMBT4403LT1GOSDKR ND
MMBT4403LT1GOSDKRND
MMBT4403LT1GOSDKR



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