Transistors Bipolar (BJT) 600mA 60V NPN
MMBT4401LT1G: Transistors Bipolar (BJT) 600mA 60V NPN
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 40 V |
Emitter- Base Voltage VEBO : | 6 V | Maximum DC Collector Current : | 0.6 A |
DC Collector/Base Gain hfe Min : | 20 at 0.1 mA at 1 V | Configuration : | Single |
Maximum Operating Frequency : | 250 MHz (Min) | Maximum Operating Temperature : | + 150 C |
Mounting Style : | SMD/SMT | Package / Case : | SOT-23 |
Packaging : | Reel |
Features of the MMBT4401LT1G is pb-free package is available.
The absolute maximum ratings of the MMBT4401LT1G can be summarized as:(1):the rating is collector-emitter voltage,the symbol is VCEO,the value is 40,the unit is Vdc;(2):the rating is collector-base voltage,the symbol is VCBO,the value is 60,the unit is Vdc;(3):the rating is emitter-base voltage,the symbol is VEBO,the value is 6.0,the unit is Vdc;(4):the rating is collectorcurrent-continuous,the symbol is IC,the value is 600,the unit is mAdc.
The thermal characteristics of the MMBT4401LT1G can be summarized as:(1):the characteristic is total device dissipation FR-5 board TA=25,the symbol is PD,the value is 225,the unit is mW;(2):the characteristic is total device dissipation FR-5 board derate above 25,the symbol is PD,the value is 1.8,the unit is mW/;(3):the characteristic is thermal resistance,junction-to-ambient,the symbol is RJA,the value is 556,the unit is /W;(4):the characteristic is total device dissipation alumina substrate TA=25,the symbol is PD,the value is 300,the unit is mW;(5):the characteristic is total device dissipation alumina substrate derate above 25,the symbol is PD,the value is 2.4,the unit is mW/;(6):the characteristic is thermal resistance,junction-to-ambient,the symbol is RJA,the value is 417,the unit is /W;(7):the characteristic is junction and storage temperature,the symbol is TJ,TSTG,the value is -55 to +150,the unit is .
Technical/Catalog Information | MMBT4401LT1G |
Vendor | ON Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 40V |
Current - Collector (Ic) (Max) | 600mA |
Power - Max | 225mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 1V |
Vce Saturation (Max) @ Ib, Ic | 400mV @ 15mA, 150mA |
Frequency - Transition | 250MHz |
Current - Collector Cutoff (Max) | - |
Mounting Type | Surface Mount |
Package / Case | SOT-23-3, TO-236-3, Micro3?, SSD3, SST3 |
Packaging | Digi-Reel? |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | MMBT4401LT1G MMBT4401LT1G MMBT4401LT1GOSDKR ND MMBT4401LT1GOSDKRND MMBT4401LT1GOSDKR |