MMBT4123

MMBT4123 is a kind of general purpose NPN epitaxial silicon transistor.

What comes next is about the maximum ratings of MMBT4123 . The VCBO (collector-base voltage) is 40 V.  The VCEO (collector-emitter voltage) is 30 V. The VEBO (emitter-base voltage) is 5 V. The IC (collector current) is 200 mA. The PC (collector power consumption) is 350 mW. The Tstg (storage temperature) is 150. The Rth(j-a) (thermal resistance junction to ambient) is 357/W.

The following is about the electrical characteristics of MMBT4123(Ta=25). The minimum BVCEO (collector-emitter breakdown voltage) is 30 V at IC=1 mA, IE=0. The minimum BVCBO (collector-base breakdown voltage) is 40 V at IC=10 A, IE=0. The minimum BVEBO (emitter-base breakdown voltage) is 5 V at IE=10 A, IC=0. The maximum ICBO (collector cut-off current) is 50 nA at VCB=20 V, IE=0. The maximum IEBO (emitter cut-off current) is 50 nA at VEB=3 V, IC=0. The minimum hFE (DC current gain) is 50 and the maximum is 150 at VCE=1 V, IC=2 mA; The minimum hFE (DC current gain) is 25 at VCE=1 V, IC=50 mA. The maximum VCE(sat) (collector-emitter saturation voltage) is 0.3 V at IC=50 mA, IB=5 mA. The maximum VBE(sat) (base-emitter saturation voltage) is 0.95 V at IC=50 mA, IB=5 mA. The minimum fT (transition frequency) is 250 MHz at VCE=20 V, IC=10 mA, f=100 MHz.