MMBT2907AWT1

Transistors Bipolar (BJT) 600mA 60V PNP

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SeekIC No. : 00213608 Detail

MMBT2907AWT1: Transistors Bipolar (BJT) 600mA 60V PNP

floor Price/Ceiling Price

Part Number:
MMBT2907AWT1
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 0.6 A
DC Collector/Base Gain hfe Min : 75 at 0.1 mA at 10 V Configuration : Single
Maximum Operating Frequency : 200 MHz (Min) Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : SC-70
Packaging : Reel    

Description

Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : PNP
Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 5 V
Package / Case : SC-70
Maximum DC Collector Current : 0.6 A
DC Collector/Base Gain hfe Min : 75 at 0.1 mA at 10 V
Maximum Operating Frequency : 200 MHz (Min)


Features:

Pb−Free Package is Available


Specifications

Rating Symbol Value Unit
Collector−Emitter Voltage VCEO -60 Vdc
Collector−Base Voltage VCBO -60 Vdc
Emitter−Base Voltage VEBO -5.0 Vdc
Collector Current − Continuous IC -600 mAdc



Parameters:

Technical/Catalog InformationMMBT2907AWT1
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)60V
Current - Collector (Ic) (Max)600mA
Power - Max225mW
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Vce Saturation (Max) @ Ib, Ic400mV @ 15mA, 150mA
Frequency - Transition200MHz
Current - Collector Cutoff (Max)-
Mounting TypeSurface Mount
Package / CaseSC-70-3, SOT-323-3
PackagingCut Tape (CT)
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names MMBT2907AWT1
MMBT2907AWT1
MMBT2907AWT1OSCT ND
MMBT2907AWT1OSCTND
MMBT2907AWT1OSCT



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