Transistors Bipolar (BJT) 700mA NPN
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 30 V | ||
Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 0.7 A | ||
DC Collector/Base Gain hfe Min : | 150 at 100 mA at 3 V | Configuration : | Single Dual Collector | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SC-74 | Packaging : | Reel |
Rating |
Symbol |
Value |
Unit |
CollectorEmitter Voltage |
VCEO |
30 |
V |
CollectorBase Voltage |
VCBO |
40 |
V |
Emitter -Base Voltage |
VEBO |
5.0 |
V |
Collector Current |
IC |
700 |
mA |
Base Current |
IB |
350 |
mA |
Total Power Dissipation @ TC = 25°C Total Power Dissipation @ TC = 85°C Thermal Resistance - Junction to Ambient (1) |
PD PD RJA |
342 178 366 |
mW mW °C/W |
Total Power Dissipation @ TC = 25°C Total Power Dissipation @ TC = 85°C Thermal Resistance - Junction to Ambient (2) |
PD PD RJA |
665 346 188 |
mW mW °C/W |
Operating and Storage Junction Temperature Range |
TJ,Tstg |
65 to +200 |
Technical/Catalog Information | MMBT2132T3 |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 30V |
Current - Collector (Ic) (Max) | 700mA |
Power - Max | 342mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 100mA, 3V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 50mA, 500mA |
Frequency - Transition | - |
Current - Collector Cutoff (Max) | - |
Mounting Type | Surface Mount |
Package / Case | SC-74-6, SSOT-6 |
Packaging | Tape & Reel (TR) |
Drawing Number | * |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | MMBT2132T3 MMBT2132T3 MMBT2132T3OS ND MMBT2132T3OSND MMBT2132T3OS |