MMBT123S

Features: · Epitaxial Planar Die Construction· Ideal for Medium Power Amplification and Switching· High Collector Current Rating· Suitable as a low voltage high current driverSpecifications Characteristic Symbol MMBT123S Unit Collector-Base Voltage VCBO 45 V Collector-Emitter Volt...

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SeekIC No. : 004423323 Detail

MMBT123S: Features: · Epitaxial Planar Die Construction· Ideal for Medium Power Amplification and Switching· High Collector Current Rating· Suitable as a low voltage high current driverSpecifications Cha...

floor Price/Ceiling Price

Part Number:
MMBT123S
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

· Epitaxial Planar Die Construction
· Ideal for Medium Power Amplification and Switching
· High Collector Current Rating
· Suitable as a low voltage high current driver





Specifications

Characteristic Symbol MMBT123S Unit
Collector-Base Voltage VCBO 45 V
Collector-Emitter Voltage VCEO 18 V
Emitter-Base Voltage VEBO 5 V
Collector Current - Continuous IC 1 A
Power Dissipation (Note 1) Pd 300 mW
Thermal Resistance, Junction to Ambient (Note 1) RJA 417 /W
Operating and Storage and Temperature Range Tj , TSTG -55 to +150 /W
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.




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