MMBR911LT1

Features: • High GainBandwidth Product fT = 7.0 GHz (Typ) @ 30 mA• Low Noise Figure NF = 1.7 dB (Typ) @ 500 MHz• High Gain GNF = 17 dB (Typ) @ 10 mA/500 MHz• StateoftheArt Technology Fine Line Geometry IonImplanted Arsenic Emitters Gold Top Metallization and Wires Silicon N...

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SeekIC No. : 004423317 Detail

MMBR911LT1: Features: • High GainBandwidth Product fT = 7.0 GHz (Typ) @ 30 mA• Low Noise Figure NF = 1.7 dB (Typ) @ 500 MHz• High Gain GNF = 17 dB (Typ) @ 10 mA/500 MHz• StateoftheArt Te...

floor Price/Ceiling Price

Part Number:
MMBR911LT1
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/26

Payment Methods

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Product Details

Description



Features:

• High GainBandwidth Product
      fT = 7.0 GHz (Typ) @ 30 mA
• Low Noise Figure
      NF = 1.7 dB (Typ) @ 500 MHz
• High Gain
      GNF = 17 dB (Typ) @ 10 mA/500 MHz
• StateoftheArt Technology
      Fine Line Geometry
      IonImplanted Arsenic Emitters
      Gold Top Metallization and Wires
      Silicon Nitride Passivation
• Available in tape and reel packaging options:
      T1 suffix = 3,000 units per reel



Specifications

Rating
Symbol
Value
Unit
CollectorEmitter Voltage
VCEO
12
Vdc
CollectorBase Voltage
VCBO
20
Vdc
EmitterBase Voltage
VEBO
2.0
Vdc
Collector Current - Continuous
IC
60
mA
Power Dissipation @ Tcase = 75°C (1)
Derate linearly above Tcase = 75°C
PD(max)
333
4.44
mW
mW/°C
Storage Temperature
Tstg
55 to +150
°C
Maximum Junction Temperature
TJmax
150
°C



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