Features: • High GainBandwidth Product fT = 7.0 GHz (Typ) @ 30 mA• Low Noise Figure NF = 1.7 dB (Typ) @ 500 MHz• High Gain GNF = 17 dB (Typ) @ 10 mA/500 MHz• StateoftheArt Technology Fine Line Geometry IonImplanted Arsenic Emitters Gold Top Metallization and Wires Silicon N...
MMBR911LT1: Features: • High GainBandwidth Product fT = 7.0 GHz (Typ) @ 30 mA• Low Noise Figure NF = 1.7 dB (Typ) @ 500 MHz• High Gain GNF = 17 dB (Typ) @ 10 mA/500 MHz• StateoftheArt Te...
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Specifications Rating Symbol Value Units CollectorEmitter Voltage VCEO -30 V...
Specifications Rating Symbol Value Units CollectorEmitter Voltage VCEO -30 V...
Specifications Rating Symbol Value Unit CollectorEmitter VoltageCollectorBase...
Rating |
Symbol |
Value |
Unit |
CollectorEmitter Voltage |
VCEO |
12 |
Vdc |
CollectorBase Voltage |
VCBO |
20 |
Vdc |
EmitterBase Voltage |
VEBO |
2.0 |
Vdc |
Collector Current - Continuous |
IC |
60 |
mA |
Power Dissipation @ Tcase = 75°C (1) Derate linearly above Tcase = 75°C |
PD(max) |
333 4.44 |
mW mW/°C |
Storage Temperature |
Tstg |
55 to +150 |
°C |
Maximum Junction Temperature |
TJmax |
150 |
°C |