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MMBR521LT1

Features: * High Current GainBandwidth Product --fT = 3.4 GHz (Typ) @ IC = 35 mAdc (MMBR521LT1)-fT = 4.2 GHz (Typ) @ IC = 50 mAdc (MRF5211LT1)* Low Noise Figure @ f = 1.0 GHz --NF = 2.5 dB (Typ) (MMBR521LT1)(matched)-NF = 2.8 dB (Typ) (MRF5211LT1)(matched)* High Power Gain - Gpe (matched) = 11 dB ...

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SeekIC No. : 004423313 Detail

MMBR521LT1: Features: * High Current GainBandwidth Product --fT = 3.4 GHz (Typ) @ IC = 35 mAdc (MMBR521LT1)-fT = 4.2 GHz (Typ) @ IC = 50 mAdc (MRF5211LT1)* Low Noise Figure @ f = 1.0 GHz --NF = 2.5 dB (Typ) (MM...

MMBR521LT1 Data Sheet

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Part Number:
MMBR521LT1
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

* High Current GainBandwidth Product -
-fT  = 3.4 GHz (Typ) @ IC  = 35 mAdc (MMBR521LT1)
-fT  = 4.2 GHz (Typ) @ I C = 50 mAdc (MRF5211LT1)
* Low Noise Figure @ f = 1.0 GHz -
-NF  = 2.5 dB (Typ) (MMBR521LT1)(matched)
-NF  = 2.8 dB (Typ) (MRF5211LT1)(matched)
* High Power Gain - Gpe (matched) = 11 dB (Typ)
* Guaranteed RF Parameters
* Surface Mounted SOT23 (MMBR521LT1) & SOT143 (MRF5211LT1) Offer Improved RF Performance
-Lower Package Parasitics
-Higher Gain
* Available in tape and reel packaging options:T1 suffix = 3,000 units per reel




Specifications

Ratings Symbol Value Unit
CollectorEmitter Voltage VCEO -10 Vdc
CollectorBase Voltage VCBO -20 Vdc
EmitterBase Voltage VEBO -2.5 Vdc
Power Dissipation (1) TC = 75 °C,
Derate linearly above TC = 75 °C @ All
 PD(max) 0.333
4.44		 W
mW/°C
Collector Current - Continuous IC 70 mA
Maximum Junction Temperature TJmax 150 °C
Storage Temperature All Tstg 55 to +150 °C



Description

MMBR521LT1 Designed primarily for use in the highgain, lownoise smallsignal amplifiers for operation up to 3.5 GHz. Also usable in applications requiring fast switching times.


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