MMBFJ309

Resistance Drain-Source RDS (on) :
Maximum Drain Gate Voltage :
Continuous Drain Current :
Configuration : Single
Transistor Polarity : N-Channel
Gate-Source Cutoff Voltage : - 4 V
Gate-Source Breakdown Voltage : - 25 V
Maximum Operating Temperature : + 150 C
Packaging : Reel
Mounting Style : SMD/SMT
Package / Case : SOT-23
Drain Source Voltage VDS : 25 V
Forward Transconductance gFS (Max / Min) : 0.01 S to 0.02 S
Drain Current (Idss at Vgs=0) : 30 mA to 80 mA
Power Dissipation : 350 mW


Specifications

Symbol	Parameter	Value	Units
VDG	Drain-Gate Voltage	25	V
VGS	Gate-Source Voltage	-25	V
IGF	Forward Gate Current	10	mA
TJ ,Tstg	Operating and Storage Junction Temperature Range	-55 to +150	°C

NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Description

The MMBFJ309 is designed for VHF/UHF amplifier, oscillator and mixerapplications. As a common gate amplifier, 16 dB at 100 MHz and12 dB at 450 MHz can be realized. Sourced from Process 92.

Parameters:

Technical/Catalog Information	MMBFJ309
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	N-Channel
Voltage - Rated	25V
Current Rating	10mA
Package / Case	SOT-23
Packaging	Tape & Reel (TR)
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MMBFJ309 MMBFJ309