MMBFJ212

Resistance Drain-Source RDS (on) :
Drain Source Voltage VDS :
Continuous Drain Current :
Configuration : Single
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : - 25 V
Maximum Drain Gate Voltage : 25 V
Power Dissipation : 225 mW
Maximum Operating Temperature : + 150 C
Packaging : Reel
Gate-Source Cutoff Voltage : - 6 V
Mounting Style : SMD/SMT
Package / Case : SOT-23
Forward Transconductance gFS (Max / Min) : 0.007 S to 0.012 S
Drain Current (Idss at Vgs=0) : 0.9 mA to 4.5 mA


Specifications

Symbol	Parameter	Value	Units
VDG	Drain-Gate Voltage	25	V
VGS	Gate-Source Voltage	-25	V
IGF	Forward Gate Current	10	mA
TJ ,Tstg	Operating and Storage Junction Temperature Range	-55 to +150	°C

NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Parameters:

Technical/Catalog Information	MMBFJ212
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	N-Channel
Voltage - Rated	25V
Current Rating	10mA
Package / Case	SOT-23
Packaging	Tape & Reel (TR)
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MMBFJ212 MMBFJ212