MOSFET N-Ch Enhance
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 60 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 0.5 A | ||
Resistance Drain-Source RDS (on) : | 5 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-23 | Packaging : | Reel |
Part Number | MMBF170 |
Config/ Polarity |
N |
PD (W) |
0.3 |
VDSS (V) |
60 |
VGSS (+/-) (V) |
20 |
ID (A) |
0.5 |
RDS(on) Max () @ VGS; 1.8V | |
RDS(on) Max () @ VGS; 2.5V | |
RDS(on) Max () @ VGS; 4.0V | |
RDS(on) Max () @ VGS; 4.5V | 5.3 |
RDS(on) Max () @ VGS; 5V | |
RDS(on) Max () @ VGS; 10.0V | 5 |
VGS(th) (V) |
3 |
Ciss (typ) (pF) |
22 |
Qg (typ) (nC) @ VGS; 4.5V |
|
Qg (typ) (nC) @ VGS; 5V |
|
Qg (typ) (nC) @ VGS; 10V |
Characteristic | Symbol | MMBF170 | Units |
Drain-Source Voltage | VDSS | 60 | V |
Drain-Gate Voltage RGS 1.0M | VDGR | 60 | V |
Gate-Source Voltage Continuous Pulsed |
VGSS | ±20 ±40 |
V |
Drain Current (Note 1) Continuous Pulsed |
ID | 500 800 |
mA |
Total Power Dissipation (Note 1) Derating above TA = 25 |
Pd | 225 1.80 |
mW mW/ |
Thermal Resistance, Junction to Ambient | RJA | 556 | K/W |
Operating and Storage Temperature Range | Tj, TSTG | -55 to +150 |
Technical/Catalog Information | MMBF170 |
Vendor | Fairchild Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25° C | 500mA |
Rds On (Max) @ Id, Vgs | 5 Ohm @ 200mA, 10V |
Input Capacitance (Ciss) @ Vds | 40pF @ 10V |
Power - Max | 300mW |
Packaging | Cut Tape (CT) |
Gate Charge (Qg) @ Vgs | - |
Package / Case | SOT-23 |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | MMBF170 MMBF170 MMBF170CT ND MMBF170CTND MMBF170CT |