MMBF170

MOSFET N-Ch Enhance

product image

MMBF170 Picture
SeekIC No. : 00147275 Detail

MMBF170: MOSFET N-Ch Enhance

floor Price/Ceiling Price

US $ .08~.22 / Piece | Get Latest Price
Part Number:
MMBF170
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.22
  • $.17
  • $.13
  • $.08
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/14

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 0.5 A
Resistance Drain-Source RDS (on) : 5 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-23 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : SOT-23
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 0.5 A
Resistance Drain-Source RDS (on) : 5 Ohms


Features:

· Low On-Resistance
· Low Gate Threshold Voltage
· Low Input Capacitance
· Fast Switching Speed
· Low Input/Output Leakage





Specifications

Part Number MMBF170
Config/
Polarity
N
PD
(W)
0.3
VDSS
(V)
60
VGSS (+/-)
(V)
20
ID
(A)
0.5
RDS(on) Max () @ VGS; 1.8V
RDS(on) Max () @ VGS; 2.5V
RDS(on) Max () @ VGS; 4.0V
RDS(on) Max () @ VGS; 4.5V 5.3
RDS(on) Max () @ VGS; 5V
RDS(on) Max () @ VGS; 10.0V 5
VGS(th)
(V)
3
Ciss (typ)
(pF)
22
Qg (typ) (nC)
@ VGS; 4.5V
Qg (typ) (nC)
@ VGS; 5V
Qg (typ) (nC)
@ VGS; 10V


Characteristic Symbol MMBF170 Units
Drain-Source Voltage VDSS 60 V
Drain-Gate Voltage RGS 1.0M VDGR 60 V
Gate-Source Voltage Continuous
Pulsed
VGSS ±20
±40
V
Drain Current (Note 1) Continuous
Pulsed
ID 500
800
mA
Total Power Dissipation (Note 1)
Derating above TA = 25
Pd 225
1.80
mW
mW/
Thermal Resistance, Junction to Ambient RJA 556 K/W
Operating and Storage Temperature Range Tj, TSTG -55 to +150





Parameters:

Technical/Catalog InformationMMBF170
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C500mA
Rds On (Max) @ Id, Vgs5 Ohm @ 200mA, 10V
Input Capacitance (Ciss) @ Vds 40pF @ 10V
Power - Max300mW
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs-
Package / CaseSOT-23
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MMBF170
MMBF170
MMBF170CT ND
MMBF170CTND
MMBF170CT



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Line Protection, Backups
Transformers
Programmers, Development Systems
Computers, Office - Components, Accessories
Cables, Wires - Management
Semiconductor Modules
View more