Specifications MBD101 MMBD101LT1 Rating Symbol Value Unit Reverse Voltage VR 7.0 Volts Forward Power Dissipation@ TA = 25Derate above 25 PF 2802.2 2251.8 mWmW/ Junction Temperature TJ +150 Storage Temperature Range Tstg 55 to +150 DescriptionMMBD101LT1_1...
MMBD101LT1_1246439: Specifications MBD101 MMBD101LT1 Rating Symbol Value Unit Reverse Voltage VR 7.0 Volts Forward Power Dissipation@ TA = 25Derate above 25 PF 2802.2 2251.8 mWmW/ Junc...
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Diodes (General Purpose, Power, Switching) Silicon Switch Diode
MBD101 | MMBD101LT1 | |||
Rating | Symbol | Value | Unit | |
Reverse Voltage | VR | 7.0 | Volts | |
Forward Power Dissipation @ TA = 25 Derate above 25 |
PF | 280 2.2 |
225 1.8 |
mW mW/ |
Junction Temperature | TJ | +150 | ||
Storage Temperature Range | Tstg | 55 to +150 |
MMBD101LT1_1246439 Designed primarily for UHF mixer applications but suitable also for use in detector and ultrafast switching circuits. Supplied in an inexpensive plastic package for lowcost, highvolume consumer requirements. Also available in Surface Mount package.
MMBD101LT1_1246439 features:
• Low Noise Figure - 6.0 dB Typ @ 1.0 GHz
• Very Low Capacitance - Less Than 1.0 pF @ Zero Volts
• High Forward Conductance - 0.5 Volts (Typ) @ IF = 10 mA