Features: ·Low Noise Figure-6.0dB Typ@1.0GHz·Very Low Capacitance-Less Than 1.0pF@zero Volts·High Forward Conductance-0.5volts(typ)@IF=10mASpecifications Parameter Symbol Value Unit Reverse voltage VR 7.0 V Forward Power Dissipation@TA = 25Derate above 25 pF ...
MMBD101: Features: ·Low Noise Figure-6.0dB Typ@1.0GHz·Very Low Capacitance-Less Than 1.0pF@zero Volts·High Forward Conductance-0.5volts(typ)@IF=10mASpecifications Parameter Symbol Value Unit ...
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Diodes (General Purpose, Power, Switching) AF DIODE 100V 0.2A
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Diodes (General Purpose, Power, Switching) AF DIODE 100V 0.25A
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Diodes (General Purpose, Power, Switching) Silicon Switch Diode
Parameter |
Symbol |
Value |
Unit |
Reverse voltage |
VR |
7.0 |
V |
Forward Power Dissipation @TA = 25 Derate above 25 |
pF |
280 2.2 |
mW mW/ |
Junction temperature |
Tj |
150 |
|
Storage temperature range |
Tstg |
-55 to +150 |