Transistors RF GaAs 31dBm GaAs Amp QFN3X3-12
MMA20312BT1: Transistors RF GaAs 31dBm GaAs Amp QFN3X3-12
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Technology Type : | InGaP HBT | Frequency : | 1.8 GHz to 2.2 GHz |
Gain : | 26.4 dB | Noise Figure : | 3.3 dB |
Drain Source Voltage VDS : | 6 V | Continuous Drain Current : | 70 mA |
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT |
Package / Case : | Case 2131-01 ( QFN-12) |