MM54HCT151_1246107

If Military/Aerospace specified devices are required,please contact the National Semiconductor Sales Office/Distributors for availability and specifications.
Supply Voltage (V_CC)                                     -0.5V to a7.0V
DC Input Voltage (V_IN)                             -1.5V to V_CCa1.5V
DC Output Voltage (V_OUT)                        -0.5V to V_CCa0.5V
Clamp Diode Current (I_IK,I_OK)                                  ±20 mA
DC Output Current, per Pin (I_OUT)                            ±25 mA
DC VCC or GND Current, per Pin (I_CC)                       ±50 mA
Storage Temperature Range (T_STG)                -65to a150
Power Dissipation (P_D)
   (Note 3)                                                                  600 mW
   S.O. Package only                                                   500 mW
Lead Temperature (T_L)
   (Soldering, 10 seconds)                                               260

This high speed Digital multiplexer MM54HCT151_1246107 utilizes advanced silicon-gate CMOS technology. Along with the high noise immunity and low power dissipation of standard CMOS integrated cir-cuits, it possesses the ability to drive 10 LS-TTL loads. The MM54HCT151_1246107 selects one of the 8 data sources, depending on the address presented on the A, B, and C inputs. It features both true (Y) and complement (W) outputs. The STROBE input must be at a low logic level to enable this multiplexer. A high logic level at the STROBE forces the W output high and the Y output low.

MM54HCT151_1246107 devices are intended to interface be-tween TTL and NMOS components and standard CMOS devices. These parts are also plug-in replacements for LS- TTL devices and can be used to reduce power consumption in existing designs.