MM1103

DescriptionThe MM1103 fullyd decoded dynamic 1024_word ×1-bit per word read/write random access memory is a monolithic MOS integrated circuit using silicon gate low threshold technology.This device provides a non-destructive read out memory cell with chip enable for easy selection when many output...

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SeekIC No. : 004422528 Detail

MM1103: DescriptionThe MM1103 fullyd decoded dynamic 1024_word ×1-bit per word read/write random access memory is a monolithic MOS integrated circuit using silicon gate low threshold technology.This device ...

floor Price/Ceiling Price

Part Number:
MM1103
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Description

The MM1103 fullyd decoded dynamic 1024_word ×1-bit per word read/write random access memory is a monolithic MOS integrated circuit using silicon gate low  threshold technology.This device provides a non-destructive read out memory cell with chip enable for easy selection when many outputs are "OR"ed. Low power is achieved by the use of dynamic logic and power dissipation occurs primarily during precharge.The MM1103 is used for main memory applications where large bit storage high performance and low cost are important.

The MM1103 has the following features include:(1)refresh cycle:2ms; (2)fully decoded; (3)easy memory expansion:Chip enable input; (4)fast access time:300ns max; (5)low power dissipation: 250 mW; (6)small package size:18 pin DIP.Supply bypassing is required for best performance.The bypass capacitors provide a low impedance return current path at the supply pins.They also provide high frequency filtering on the power supply traces.Other layout factors play a major role in  high frequency performance.

The absolute maximum ratings of the MM1103 are:(1)power disspation at room temperature:500mW;(2)storage temperature range:-65 to +160°C;(3)operating temperature range:-25 to +70°C;(4)supply voltage Vdd and Vss with respect to Vss:+0.3V to -25V.The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite).

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