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ML792E32

Features: ` /4 phase shifted grating structure`High side-mode-suppression-ratio (typical 45dB)`Wide temperature range operation ( 0 oC to 85oC )`High resonance frequency (typical 15GHz)`Chip-on-carrierApplication10Gbps Ethernet/Short ReachSpecifications Symbol Ratings Condition Par...

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ML792E32: Features: ` /4 phase shifted grating structure`High side-mode-suppression-ratio (typical 45dB)`Wide temperature range operation ( 0 oC to 85oC )`High resonance frequency (typical 15GHz)`Chip-on-carr...

ML792E32 Data Sheet

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Part Number:
ML792E32
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

` /4 phase shifted grating structure
`High side-mode-suppression-ratio (typical 45dB)
`Wide temperature range operation ( 0 oC to 85oC )
`High resonance frequency (typical 15GHz)
`Chip-on-carrier


Application

10Gbps Ethernet/Short Reach


Specifications

Symbol

Ratings

Condition

Parameter

Unit

If

VRL

Tc

Tstg

 Laser forward current

Laser reverse voltage

Operation temperature

Storage temperature
-

-

-

-
120

2

0 ~ +85

-40 ~+100
mA

V

°C

°C



Description

ML792E32 series are uncooled DFB (Distributed Feedback) laser diodes for 10Gbps transmission emitting light beam at 1310nm. /4 phase shifted grating structure is employed to obtain excellent SMSR performance under 10Gbps modulation. Furthermore, ML792E32 is able to operate in the wide temperature range from 0oC to 85oC without temperature control.




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