Features: • Output 30mW (CW) 40mW (pulse)• Short astigmatic distance• MQW * active layer * : Multiple Quantum Well Built-in monitor photodiodeApplicationOptical disc drive ( rewritable , write once)Specifications Symbol Parameter Condition Rating Units PO L...
ML60116R: Features: • Output 30mW (CW) 40mW (pulse)• Short astigmatic distance• MQW * active layer * : Multiple Quantum Well Built-in monitor photodiodeApplicationOptical disc drive ( rewrit...
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• Output 30mW (CW) 40mW (pulse)
• Short astigmatic distance
• MQW * active layer * : Multiple Quantum Well Built-in monitor photodiode
Symbol |
Parameter |
Condition |
Rating |
Units |
PO |
Light output power |
CW |
40 |
mV |
Pulse(Note 2) |
50 | |||
VRL |
Reverse voltage (laser diode) |
- |
2 |
V |
VRD |
Reverse voltage (Photodiode) |
- |
30 |
V |
IFD |
Forward current (Photodiode) |
- |
10 |
mA |
TC |
Case temperature |
- |
-40 ~ +60 |
|
TSTG |
Storage temperature |
- |
-55 ~ +100 |
Note1: The maximum rating means the limitation over which the laser should not be operated even instant time, and this does not mean the guarantee of its lifetime.As for the reliability,please refer to the reliability report from Mitsubishi Semiconductor Quality Assurance Department.
Note2: TARGET SPEC /Condition Duty less than 50%,pulse width less than 1ms
ML60116R is a high power AlGaAs semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of 785nm and standard light output of 30mW.
ML60116R is produced by the MOCVD crystal growth method which is excellent in mass production and characteristics uniformity. This is a high -performance, highly reliable, and long life semiconductor laser.