ML60116R

Features: • Output 30mW (CW) 40mW (pulse)• Short astigmatic distance• MQW * active layer * : Multiple Quantum Well Built-in monitor photodiodeApplicationOptical disc drive ( rewritable , write once)Specifications Symbol Parameter Condition Rating Units PO L...

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SeekIC No. : 004422136 Detail

ML60116R: Features: • Output 30mW (CW) 40mW (pulse)• Short astigmatic distance• MQW * active layer * : Multiple Quantum Well Built-in monitor photodiodeApplicationOptical disc drive ( rewrit...

floor Price/Ceiling Price

Part Number:
ML60116R
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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evaluate  (4.8 stars)

Upload time: 2024/12/24

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Product Details

Description



Features:

• Output 30mW (CW) 40mW (pulse)
• Short astigmatic distance
• MQW * active layer * : Multiple Quantum Well Built-in monitor photodiode




Application

Optical disc drive ( rewritable , write once)


Specifications

Symbol
Parameter
Condition
Rating
Units
PO
Light output power
CW
40
mV
Pulse(Note 2)
50
VRL
Reverse voltage (laser diode)
-
2
V
VRD
Reverse voltage (Photodiode)
-
30
V
IFD
Forward current (Photodiode)
-
10
mA
TC
Case temperature
-
-40 ~ +60
TSTG
Storage temperature
-
-55 ~ +100


Note1: The maximum rating means the limitation over which the laser should not be operated even instant time, and this does not mean the guarantee of its lifetime.As for the reliability,please refer to the reliability report from Mitsubishi Semiconductor Quality Assurance Department.
Note2: TARGET SPEC /Condition Duty less than 50%,pulse width less than 1ms

 




Description

ML60116R is a high power AlGaAs semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of 785nm and standard light output of 30mW.

ML60116R is produced by the MOCVD crystal growth method which is excellent in mass production and characteristics uniformity. This is a high -performance, highly reliable, and long life semiconductor laser.




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