DescriptionThe ML101J10 is designed as one kind of high power AIGalnP semiconductor laser device that provides a stable, single transverse mode oscillation with emission wavelength of 685 nm and standard CW light output of 50 mW. Also this ML101J10 has a window-mirror-facet which improves the maxi...
ML101J10: DescriptionThe ML101J10 is designed as one kind of high power AIGalnP semiconductor laser device that provides a stable, single transverse mode oscillation with emission wavelength of 685 nm and sta...
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The ML101J10 is designed as one kind of high power AIGalnP semiconductor laser device that provides a stable, single transverse mode oscillation with emission wavelength of 685 nm and standard CW light output of 50 mW. Also this ML101J10 has a window-mirror-facet which improves the maximum output power. That leads to highly reliable and high-power operation. and this device can be used in optical disc drive (high density / high speed) applications.
The absolute maximum ratings of the ML101J10 can be summarized as:(1)light output power: 60 mW;(2)reverse voltage: 2 V;(3)case temperature: -10 to +60;(4)storage temperature: -40 to +100.
The electrical characteristics of the ML101J10 can be summarized as:(1)threshold current: 40 to 80 mA;(2)operation current: 110 to 150 mA;(3)operating voltage: 2 to 3 V;(4)slope efficiency: 0.5 to 1.0 mW/mA;(5)peak wavelength: 670 to 700 nm;(6)beam divergence angle (parallel): 7 to 12;(7)beam divergence angle: 16 to 24. If you want to know more information such as the electrical characteristics about the ML101J10, please download the datasheet in www.seekic.com or www.chinaicmart.com.