MJW3281A

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Packaging : Tube
Maximum DC Collector Current : 15 A
Collector- Emitter Voltage VCEO Max : 230 V
DC Collector/Base Gain hfe Min : 50
Maximum Operating Frequency : 30 MHz
Package / Case : TO-247


Application

• Designed for 100 W Audio Frequency
• Gain Complementary: Gain Linearity from 100 mA to 7 A hFE = 45 (Min) @ IC = 8 A
• Low Harmonic Distortion
• High Safe Operation Area 1 A/100 V @ 1 Second
• High fT 30 MHz Typical


Specifications

Rating	Symbol	Value	Unit
CollectorEmitter Voltage	VCEO	230	Vdc
CollectorBase Voltage	VCEO	230	Vdc
EmitterBase Voltage	VEBO	5.0	Vdc
CollectorEmitter Voltage - 1.5 V	VCEX	230	Vdc
Collector Current - Continuous - Peak (1)(Note 1)	IC	15 25	Adc
Base Current - Continuous	IB	1.5	Adc
Total Power Dissipation @ TC = 25 Derate Above 25	PD	200 1.43	Watts W/
Operating and Storage Junction Temperature Range	TJ, Tstg	65 to +150

Parameters:

Technical/Catalog Information	MJW3281A
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	230V
Current - Collector (Ic) (Max)	15A
Power - Max	200W
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 100mA, 5V
Vce Saturation (Max) @ Ib, Ic	2V @ 1A, 10A
Frequency - Transition	30MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-247-3 (TO-247AC, Straight Leads)
Packaging	Tube
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	MJW3281A MJW3281A MJW3281AOS ND MJW3281AOSND MJW3281AOS