Features: • Excellent Dynamic Saturation Characteristics• Rugged RBSOA Capability• CollectorEmitter Sustaining Voltage - VCEO(sus) - 400 V• CollectorEmitter Breakdown - V(BR)CES - 650 V• StateofArt Bipolar Power Transistor Design• Fast Inductive Switching: tfi =...
MJW16110: Features: • Excellent Dynamic Saturation Characteristics• Rugged RBSOA Capability• CollectorEmitter Sustaining Voltage - VCEO(sus) - 400 V• CollectorEmitter Breakdown - V(BR)...
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Rating |
Symbol |
MJ16018 |
MJW16018 |
Unit |
CollectorEmitter Sustaining Voltage |
VCEO(SUS) |
400 |
Vdc | |
CollectorEmitter Breakdown Voltage |
VCBs |
650 |
Vdc | |
EmitterBase Voltage |
VEBO |
6 |
Vdc | |
Collector Current - Continuous - Pulsed (1) |
IC ICM |
15 20 |
Adc | |
Base Current - Continuous - Pulsed (1) |
IB IBM |
10 15 |
Adc | |
Total Power Dissipation @ TC = 25 @ TC = 100 Derate above TC = 25 |
PD |
175 100 1 |
135 54 10.9 |
Watts W/ |
Operating and Storage Junction Temperature Range |
TJ, Tstg |
65 to +200 |
55 to +200 |