MJW16110

Features: • Excellent Dynamic Saturation Characteristics• Rugged RBSOA Capability• CollectorEmitter Sustaining Voltage - VCEO(sus) - 400 V• CollectorEmitter Breakdown - V(BR)CES - 650 V• StateofArt Bipolar Power Transistor Design• Fast Inductive Switching: tfi =...

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MJW16110 Picture
SeekIC No. : 004421634 Detail

MJW16110: Features: • Excellent Dynamic Saturation Characteristics• Rugged RBSOA Capability• CollectorEmitter Sustaining Voltage - VCEO(sus) - 400 V• CollectorEmitter Breakdown - V(BR)...

floor Price/Ceiling Price

Part Number:
MJW16110
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/21

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Product Details

Description



Features:

• Excellent Dynamic Saturation Characteristics
• Rugged RBSOA Capability
• CollectorEmitter Sustaining Voltage - VCEO(sus) - 400 V
• CollectorEmitter Breakdown - V(BR)CES - 650 V
• StateofArt Bipolar Power Transistor Design
• Fast Inductive Switching: tfi = 25 ns (Typ) @ 100C tc = 50 ns (Typ) @ 100C tsv = 1 ms (Typ) @ 100C
• Ultrafast FBSOA Specified
• 100C Performance Specified for: RBSOA Inductive Load Switching Saturation Voltages Leakages



Specifications

Rating
Symbol
MJ16018
MJW16018
Unit
CollectorEmitter Sustaining Voltage
VCEO(SUS)
400
Vdc
CollectorEmitter Breakdown Voltage
VCBs
650
Vdc
EmitterBase Voltage
VEBO
6
Vdc
Collector Current - Continuous
- Pulsed (1)
IC
ICM
15
20
Adc
Base Current - Continuous
- Pulsed (1)
IB
IBM
10
15
Adc
Total Power Dissipation
@ TC = 25
@ TC = 100
Derate above TC = 25
PD
175
100
1
135
54
10.9
Watts
W/
Operating and Storage Junction
Temperature Range
TJ, Tstg
65 to +200
55 to +200



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