MJH6287

Transistor Polarity : PNP
Mounting Style : Through Hole
Packaging : Tube
Configuration : Single
Collector- Emitter Voltage VCEO Max : 100 V
Emitter- Base Voltage VEBO : 5 V
Collector- Base Voltage VCBO : 100 V
Maximum Operating Temperature : + 150 C
Maximum Collector Cut-off Current : 1000 uA
Maximum DC Collector Current : 20 A
Power Dissipation : 160 W
Package / Case : SOT-93


Application

• Similar to the Popular NPN 2N6282, 2N6283, 2N6284 and the PNP 2N6285, 2N6286, 2N6287
• Rugged RBSOA Characteristics
• Monolithic Construction with Builtin CollectorEmitter Diode


Specifications

Rating	Symbol	MJH6282 MJH6285	MJH6283 MJH6286	MJH6284 MJH6287	Unit
CollectorEmitter Voltage	VCEO	60	80	100	Vdc
CollectorBase Voltage	VCB	60	80	100	Vdc
EmitterBase Voltage	VEB	5.0			Vdc
Collector Current - Continuous - Peak	IC	20 40			Adc
Base Current	IB	0.5			Adc
Total Power Dissipation @ TC = 25 Derate Above 25	PD	160 1.28			Watts W/
Operating and Storage Junction Temperature Range	TJ, Tstg	65 to +150

Parameters:

Technical/Catalog Information	MJH6287
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP - Darlington
Voltage - Collector Emitter Breakdown (Max)	100V
Current - Collector (Ic) (Max)	20A
Power - Max	160W
DC Current Gain (hFE) (Min) @ Ic, Vce	750 @ 10A, 3V
Vce Saturation (Max) @ Ib, Ic	2V @ 40mA, 10A
Frequency - Transition	4MHz
Current - Collector Cutoff (Max)	1mA
Mounting Type	Through Hole
Package / Case	SOT-93, TO-218 (Straight Leads)
Packaging	Tube
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	MJH6287 MJH6287 MJH6287OS ND MJH6287OSND MJH6287OS