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MJF18006

Features: • 1500 Volt CollectorEmitter Breakdown Capability• Typical Dynamic Desaturation Specified (New TurnOff Characteristic)• Application Specific StateoftheArt Die Design• Fast Switching: 200 ns Inductive Fall Time (Typ) 2000 ns Inductive Storage Time (Typ)• Low ...

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MJF18006: Features: • 1500 Volt CollectorEmitter Breakdown Capability• Typical Dynamic Desaturation Specified (New TurnOff Characteristic)• Application Specific StateoftheArt Die Design̶...

MJF18006 Data Sheet

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Part Number:
MJF18006
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

• 1500 Volt CollectorEmitter Breakdown Capability
• Typical Dynamic Desaturation Specified (New TurnOff Characteristic)
• Application Specific StateoftheArt Die Design
• Fast Switching: 200 ns Inductive Fall Time (Typ) 2000 ns Inductive Storage Time (Typ)
• Low Saturation Voltage: 0.15 Volts at 5.5 Amps Collector Current and 2.5 A Base Drive
• Low CollectorEmitter Leakage Current - 250 mA Max at 1500 Volts - VCES
• High EmitterBase Breakdown Capability For High Voltage Off Drive Circuits - 8.0 Volts (Min)




Specifications

Rating
Symbol
Value
Unit
CollectorEmitter Breakdown Voltage
VCES
1500
Vdc
CollectorBase Sustaining Voltage
VCEO(SUS)
650
Vdc
EmitterBase Voltage
VEBO

8.0
Vdc
RMS Isolation Voltage (2)
(for 1 sec, TA = 25, Per Fig. 14
Rel. Humidity < 30%) Per Fig. 15
VISOL
-
-
Vdc

Collector Current - Continuous
- Peak (1)
IC
ICM
10
15
Adc
Base Current - Continuous
- Pulsed (1)
IB
IBM
5.0
10
Adc
Maximum Repetitive EmitterBase
Avalanche Energy
W(BER)
0.2
mJ
Total Power Dissipation @ TC = 25
Total Power Dissipation @ TC = 100
Derated above TC = 25
PD


150
39
1.49
Watts
W/
Operating and Storage Junction Temperature Range
TJ, Tstg
65 to +150





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