Transistors Bipolar (BJT) 5A 450V 35W NPN
MJF18004: Transistors Bipolar (BJT) 5A 450V 35W NPN
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 450 V |
Emitter- Base Voltage VEBO : | 9 V | Maximum DC Collector Current : | 5 A |
DC Collector/Base Gain hfe Min : | 12 | Configuration : | Single |
Maximum Operating Frequency : | 13 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | Through Hole | Package / Case : | TO-220 Full-Pak |
Packaging : | Tube |
Rating |
Symbol |
Value
|
Unit |
CollectorEmitter Breakdown Voltage |
VCES |
1500 |
Vdc |
CollectorBase Sustaining Voltage |
VCEO(SUS) |
650 |
Vdc |
EmitterBase Voltage |
VEBO |
8.0 |
Vdc |
RMS Isolation Voltage (2) (for 1 sec, TA = 25, Per Fig. 14 Rel. Humidity < 30%) Per Fig. 15 |
VISOL |
- - |
Vdc |
Collector Current - Continuous |
IC ICM |
10 15 |
Adc |
Base Current - Continuous - Pulsed (1) |
IB IBM |
5.0 10 |
Adc |
Maximum Repetitive EmitterBase Avalanche Energy |
W(BER) |
0.2 |
mJ |
Total Power Dissipation @ TC = 25 Total Power Dissipation @ TC = 100 Derated above TC = 25 |
PD |
|
Watts W/ |
Operating and Storage Junction Temperature Range |
TJ, Tstg |
65 to +150 |
Technical/Catalog Information | MJF18004 |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 450V |
Current - Collector (Ic) (Max) | 5A |
Power - Max | 35W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 12 @ 1A, 2.5V |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 1A |
Frequency - Transition | 13MHz |
Current - Collector Cutoff (Max) | 100A |
Mounting Type | Through Hole |
Package / Case | TO-220-3 Full Pack (Straight Leads) |
Packaging | Tube |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | MJF18004 MJF18004 MJF18004OS ND MJF18004OSND MJF18004OS |