Transistors Bipolar (BJT) 8A 400V 80W PNP
MJE5852G: Transistors Bipolar (BJT) 8A 400V 80W PNP
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Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 400 V | ||
Emitter- Base Voltage VEBO : | 6 V | Maximum DC Collector Current : | 8 A | ||
DC Collector/Base Gain hfe Min : | 15 | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220AB | Packaging : | Tube |
Technical/Catalog Information | MJE5852G |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | PNP |
Voltage - Collector Emitter Breakdown (Max) | 400V |
Current - Collector (Ic) (Max) | 8A |
Power - Max | 80W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 2A, 5V |
Vce Saturation (Max) @ Ib, Ic | 2V @ 1A, 4A |
Frequency - Transition | - |
Current - Collector Cutoff (Max) | - |
Mounting Type | Through Hole |
Package / Case | TO-220-3 (Straight Leads) |
Packaging | Tube |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | MJE5852G MJE5852G MJE5852GOS ND MJE5852GOSND MJE5852GOS |