Transistors Bipolar (BJT) 8A 300V 80W PNP
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Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 300 V | ||
Emitter- Base Voltage VEBO : | 6 V | Maximum DC Collector Current : | 8 A | ||
DC Collector/Base Gain hfe Min : | 15 | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220AB | Packaging : | Tube |
• Switching Regulators
• Inverters
• Solenoid and Relay Drivers
• Motor Controls
• Deflection Circuits
Rating | Symbol | MJE5850 | Unit |
CollectorEmitter Voltage | VCEO(sus) | 300 | Vdc |
CollectorEmitter Voltage | VCEV | 350 | Vdc |
Emitter Base Voltage | VEB | 6.0 | Vdc |
Collector Current - Continuous Peak (1) |
IC ICM |
8.0 1 6 |
Adc |
Base Current - Continuous Peak (1) |
IB IBM |
4.0 8.0 |
Adc |
Total Power Dissipation @ TC = 25 Derate above 25 |
PD | 80 0.640 |
Watts W/ |
Operating and Storage Junction Temperature Range |
TJ, Tstg | 65 to 150 |
The MJE5850, MJE5851 and the MJE5852 transistors are designed for highvoltage,highspeed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications such as:
Technical/Catalog Information | MJE5850 |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | PNP |
Voltage - Collector Emitter Breakdown (Max) | 300V |
Current - Collector (Ic) (Max) | 8A |
Power - Max | 80W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 2A, 5V |
Vce Saturation (Max) @ Ib, Ic | 2V @ 1A, 4A |
Frequency - Transition | - |
Current - Collector Cutoff (Max) | - |
Mounting Type | Through Hole |
Package / Case | TO-220-3 (Straight Leads) |
Packaging | Tube |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | MJE5850 MJE5850 MJE5850OS ND MJE5850OSND MJE5850OS |