MJE5850

Transistors Bipolar (BJT) 8A 300V 80W PNP

product image

MJE5850 Picture
SeekIC No. : 00213572 Detail

MJE5850: Transistors Bipolar (BJT) 8A 300V 80W PNP

floor Price/Ceiling Price

Part Number:
MJE5850
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/26

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 300 V
Emitter- Base Voltage VEBO : 6 V Maximum DC Collector Current : 8 A
DC Collector/Base Gain hfe Min : 15 Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Maximum Operating Frequency :
Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : 6 V
Mounting Style : Through Hole
Package / Case : TO-220AB
Packaging : Tube
Maximum DC Collector Current : 8 A
DC Collector/Base Gain hfe Min : 15
Collector- Emitter Voltage VCEO Max : 300 V


Features:

• Switching Regulators
• Inverters
• Solenoid and Relay Drivers
• Motor Controls
• Deflection Circuits




Specifications

Rating Symbol MJE5850 Unit
CollectorEmitter Voltage VCEO(sus) 300 Vdc
CollectorEmitter Voltage VCEV 350 Vdc
Emitter Base Voltage VEB 6.0 Vdc
Collector Current - Continuous
Peak (1)
IC
ICM
8.0
1 6
Adc
Base Current - Continuous
Peak (1)
IB
IBM
4.0
8.0
Adc
Total Power Dissipation
@ TC = 25 Derate above 25
PD 80
0.640
Watts
W/
Operating and Storage Junction
Temperature Range
TJ, Tstg 65 to 150  



Description

The MJE5850, MJE5851 and the MJE5852 transistors are designed for highvoltage,highspeed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications such as:




Parameters:

Technical/Catalog InformationMJE5850
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)300V
Current - Collector (Ic) (Max)8A
Power - Max80W
DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 2A, 5V
Vce Saturation (Max) @ Ib, Ic2V @ 1A, 4A
Frequency - Transition-
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
PackagingTube
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names MJE5850
MJE5850
MJE5850OS ND
MJE5850OSND
MJE5850OS



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Audio Products
Industrial Controls, Meters
Sensors, Transducers
Discrete Semiconductor Products
Batteries, Chargers, Holders
View more