MJE5731G, US $ .38-.7 , ON Semiconductor, MJE5731G DataSheet download, circuit diagram from SeekIC.com

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MJE5731G: Transistors Bipolar (BJT) 1A 350V 40W PNP

MJE5731G Data Sheet

US $ .38~.7 / Piece | Get Latest Price

Part Number:: MJE5731G
Mfg:: ON Semiconductor
Supply Ability:: 5000

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Upload time: 2024/11/24

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What is this?

MJE5731AG evaluate
US $.43 - .78 / Piece

Transistors Bipolar (BJT) BIP PNP 1A 375V
MJE5730G evaluate
US $.4 - .7 / Piece

Transistors Bipolar (BJT) 1A 300V 40W PNP
MJE5731A evaluate
Transistors Bipolar (BJT) 1A 375V 40W PNP

Product Details

Quick Details

Transistor Polarity :	PNP	Collector- Emitter Voltage VCEO Max :	350 V
Emitter- Base Voltage VEBO :	5 V	Maximum DC Collector Current :	1 A
DC Collector/Base Gain hfe Min :	30	Configuration :	Single
Maximum Operating Frequency :	10 MHz (Min)	Maximum Operating Temperature :	+ 150 C
Mounting Style :	Through Hole	Package / Case :	TO-220AB
Packaging :	Tube

Description

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-220AB
Packaging : Tube
Maximum DC Collector Current : 1 A
DC Collector/Base Gain hfe Min : 30
Maximum Operating Frequency : 10 MHz (Min)
Collector- Emitter Voltage VCEO Max : 350 V

Parameters:

Technical/Catalog Information	MJE5731G
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	350V
Current - Collector (Ic) (Max)	1A
Power - Max	40W
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 300mA, 10V
Vce Saturation (Max) @ Ib, Ic	1V @ 200mA, 1A
Frequency - Transition	10MHz
Current - Collector Cutoff (Max)	1mA
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MJE5731G MJE5731G

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MJE5731G

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