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MJE5731G

Transistors Bipolar (BJT) 1A 350V 40W PNP

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SeekIC No. : 00204683 Detail

MJE5731G: Transistors Bipolar (BJT) 1A 350V 40W PNP

MJE5731G Data Sheet

floor Price/Ceiling Price

US $ .38~.7 / Piece | Get Latest Price
Part Number:
MJE5731G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.7
  • $.63
  • $.51
  • $.38
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/8/13

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 350 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 1 A
DC Collector/Base Gain hfe Min : 30 Configuration : Single
Maximum Operating Frequency : 10 MHz (Min) Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-220AB
Packaging : Tube    

Description

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-220AB
Packaging : Tube
Maximum DC Collector Current : 1 A
DC Collector/Base Gain hfe Min : 30
Maximum Operating Frequency : 10 MHz (Min)
Collector- Emitter Voltage VCEO Max : 350 V


Parameters:

Technical/Catalog InformationMJE5731G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)350V
Current - Collector (Ic) (Max)1A
Power - Max40W
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 300mA, 10V
Vce Saturation (Max) @ Ib, Ic1V @ 200mA, 1A
Frequency - Transition10MHz
Current - Collector Cutoff (Max)1mA
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MJE5731G
MJE5731G



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