MJE350, US $ .18-.22 , STMicroelectronics, MJE350 DataSheet download, circuit diagram from SeekIC.com

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MJE350: Transistors Bipolar (BJT) PNP Medium Power

MJE350 Data Sheet

US $ .18~.22 / Piece | Get Latest Price

Part Number:: MJE350
Mfg:: STMicroelectronics
Supply Ability:: 5000

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Upload time: 2024/11/26

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Product Details

Quick Details

Transistor Polarity :	PNP	Collector- Emitter Voltage VCEO Max :	300 V
Emitter- Base Voltage VEBO :	3 V	Maximum DC Collector Current :	0.5 A
DC Collector/Base Gain hfe Min :	30	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	SOT-32	Packaging :	Tube

Description

Maximum Operating Frequency :
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Transistor Polarity : PNP
Packaging : Tube
Maximum DC Collector Current : 0.5 A
Collector- Emitter Voltage VCEO Max : 300 V
Emitter- Base Voltage VEBO : 3 V
DC Collector/Base Gain hfe Min : 30
Package / Case : SOT-32

Parameters:

Technical/Catalog Information	MJE350
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	300V
Current - Collector (Ic) (Max)	500mA
Power - Max	20.8W
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 50mA, 10V
Vce Saturation (Max) @ Ib, Ic	-
Frequency - Transition	-
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	SOT-32-3, TO-126-3
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MJE350 MJE350 497 2630 5 ND 49726305ND 497-2630-5

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MJE350

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