Transistors Bipolar (BJT) 4A 100V 15W PNP
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Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 100 V |
Emitter- Base Voltage VEBO : | 7 V | Maximum DC Collector Current : | 4 A |
DC Collector/Base Gain hfe Min : | 40 | Configuration : | Single |
Maximum Operating Frequency : | 40 MHz (Min) | Maximum Operating Temperature : | + 150 C |
Mounting Style : | Through Hole | Package / Case : | TO-225 |
Packaging : | Bulk |
Rating |
Symbol |
Value |
Unit |
CollectorEmitter Sustaining Voltage |
VCEO |
100 |
Vdc |
CollectorBase Breakdown Voltage |
VCB |
100 |
Vdc |
Emitter-Base Voltage |
VEB |
7.0 |
Vdc |
Collector Current - Continuous - Peak |
IC |
4.0 8.0 |
Adc |
Base Current - Continuous - Peak |
IB |
10 |
Adc |
Total Device Dissipation @ TA = 250C Derated above 25°C |
PD |
15 0.12 |
Watts W/ac |
Total Device Dissipation @ TC = 250C Derated above 25°C |
PD |
1.5 0.012 |
Watts W/ |
Operating and Storage Temperature |
Tj,Tstg |
-65 to +150 |